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講演
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2022.01.19 NEDIA 半導体センサパッケージング展｜篠島靖｜自動車の電動化とパワー半導体開発動向
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2021.12.15 SEMICON JAPAN 2021｜橋本雅人｜CASE における車載半導体 Automotive Semiconductors in the CASE era
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2021.10.28 NEDIA 電子デバイスフォーラム京都｜篠島靖｜CASEの現状と半導体動向
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2021.06.20 TRANSDUCERS 2021｜川原伸章｜Automotive Semiconductors in the CASE era
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2021.05.30 ISPSD2021｜篠島靖｜CASEに向けた車載半導体の動向
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2020.10.21 第3回[名古屋]ネプコンジャパン-エレクトロニクス開発・実装展-｜篠島靖｜CASEに向けた車載半導体の動向
論文 ※掲載氏名は、ミライズテクノロジーズ社内の主担当者です。
- 2023.04.03 Japanese Journal of Applied Physics｜三宅裕樹｜Homoepitaxial growth of Ge doped β-gallium oxide thin films by mist chemical vapor deposition
- 2023.03.14 Applied Physics Letters｜長里喜隆｜Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions
- 2023.02.20 JJAP RAPID COMMUNICATION｜原一都｜Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3
- 2022.09.28 EuMC2022｜幸谷真人｜Thinned Array with Steerable Nulls to cancel Grating Lobe for Automotive Radar Applications
- 2022.09.26 IEEE Transactions on Power Electronics｜石野寛｜Online Condition Monitoring of Solder Fatigue in a Clip-Bonding SiC mosfet Power Assembly via Acoustic Emission Technique
- 2022.07.15 Journal of Crystal Growth｜神田貴裕｜Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method
- 2022.07.01 JJAP RAPID COMMUNICATION｜原一都｜Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl3 gas supply system
- 2022.05.22 Japanese Journal of Applied Physics｜山田英雄｜Effect of structural relaxation at bellow crystallization temperature on internal stress of Ni–Nb–Zr thin film amorphous alloys diaphragm for micro electromechanical systems sensors
- 2022.01.27 Scientific Reports ｜渡辺弘紀｜Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
- 2021.11.01 Journal of Magnetic Resonance｜程帆｜A 2.0-GHz compact ESR spectrometer for monitoring automobile lubrication oil degradation
- 2021.10.06 Applied Physics Express｜長里喜隆｜Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
- 2021.06.22 Applied Physics Letters｜長里喜隆｜Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress
- 2021.06.15 Materials Sience in Semiconductor Processing｜永岡達司｜Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition
- 2021.04.23 Japanese Journal of Applied Physics｜富田英幹｜Dependence of the interfacial atomic structure of SiO2/GaN upon SiO2 deposition methods and post-deposition annealing, as revealed by X-ray absorption spectroscopy
- 2021.04.16 Applied Pysics Express ｜大川峰司｜Determination of Mg acceptor concentration in GaN through photoluminescence
- 2021.01.20 JSSC(Journal of Solid State Circuits)｜幸谷真人｜77GHz CMOS Built-In Self-Test with 72dB C/N and less than 1ppm frequency tolerance for a multi-channel radar application
- 2020.12.04 Applied Physics Express｜石田崇｜Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment
- 2020.08.19 The Japan Society of Applied Physics｜神田貴裕｜Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method
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2020.05.01 日本半導体製造装置協会(SEAJ)｜川井文彰｜半導体で実現する自動車の現状と未来 その2 電動化技術とパワー半導体
- 2020.07.20 ESSCIRC2020｜幸谷真人｜Power Calibration Loop with High Accuracy of 10dBm ±0.5dB for a 77 GHz Radar Application
- 2020.07.03 Japanese Journal of Applied Physics｜永岡達司｜Determination of Zn-containing sites in β-Ga2O3 film grown through mist chemical vapor deposition via X-ray absorption spectroscopy